http://www.nano-fab.com/index.php/phase-change-materials-gst/ WebJan 20, 2024 · In this paper, we propose a tunable thermal emitter consisting of metal-insulator-metal (MIM) plasmonic metamaterial based on phase-change material Ge 2 …
Broadband Reflective Optical Limiter Using GST Phase …
GeSbTe (germanium-antimony-tellurium or GST) is a phase-change material from the group of chalcogenide glasses used in rewritable optical discs and phase-change memory applications. Its recrystallization time is 20 nanoseconds, allowing bitrates of up to 35 Mbit/s to be written and direct overwrite capability up to … See more GeSbTe is a ternary compound of germanium, antimony, and tellurium, with composition GeTe-Sb2Te3. In the GeSbTe system, there is a pseudo-line as shown upon which most of the alloys lie. Moving down this … See more Threshold switching occurs when GeSbTe goes from a high resistive state to a conductive state at the threshold field of about 56 V/um. This can be seen from the current-voltage (IV) plot, where current is very low in the amorphous state at low voltage until … See more Another similar material is AgInSbTe. It offers higher linear density, but has lower overwrite cycles by 1-2 orders of magnitude. It is used in groove-only recording formats, often in rewritable CDs. AgInSbTe is known as a growth-dominated material … See more The unique characteristic that makes phase-change memory useful as a memory is the ability to effect a reversible phase change … See more Recently, much research has focused on the material analysis of the phase-change material in an attempt to explain the high speed phase change of GeSbTe. Using EXAFS, it was found that the most matching model for crystalline GeSbTe is a distorted rocksalt … See more WebFeb 1, 2024 · These challenges can be partially addressed by combining chalcogenide phase change materials (PCMs) such as Ge 2 Sb 2 Te-5 (GST) with silicon photonics, … t rex careers
Progressive amorphization of GeSbTe phase …
WebIn summary, this paper proposes a multifunctional nanostructure with phase-change materials for tunable infrared detection, radiative cooling and infrared-laser compatible camouflage. The structure uses a combination of gold arrays with slits in the top-layer, and innovatively introduces the nonvolatile phase-change material GST. Webspecial to chalcogenide materials, i.e. quick change in electrical resistance above a threshold voltage, is suitable for phase-change random access memory (RAM) and … tenis bely y beto